Miniature Integrated Power Monitor

文件：171.2 Kbytes 页数：4 Pages

JDSU

捷迪讯

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switchi

文件：112.88 Kbytes 页数：2 Pages

GESS

Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode Power Field-Effect Transistors Features • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority carrier device

文件：176.97 Kbytes 页数：5 Pages

GESS

IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, freedom from second breakdown, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well suited for applications such as switching D

文件：474.27 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司