CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

文件：260.029 Kbytes 页数：10 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

900V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. ·Low specific on-state resistance (R on*A)\n ·Very low energy storage in output capacitance (E oss) @400V\n ·Low gate charge (Q g)\n ·Fieldproven CoolMOS™ quality\n ·CoolMOS™ technology has been manufactured by Infineon since 1998;

Infineon

英飞凌

CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

文件：293 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

文件：553.87 Kbytes 页数：11 Pages

Infineon

英飞凌