CoolMOS Power Transistor

Features • Worldwide best R DS ,on in TO220 • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: • Hard &am

文件：279.13 Kbytes 页数：10 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.14Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：331.03 Kbytes 页数：2 Pages

ISC

无锡固电

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS ™ CP 是英飞凌 CoolMOS ™的第五个系列，专为硬开关和软开关拓扑、CCM PFC 以及 ATX、笔记本适配器 PDP 和 LCD 电视的 PWM 而设计。 • 最低品质因数 R on x Q g\n• 超低栅极电荷\n• 极高的 dv/dt 速率\n• 超低 R DS(on)、超低栅极电荷、极快的开关速度\n• V th 3 V，g fs 非常高，内部 R g 非常低\n• 高电流能力\n• 显著降低传导和开关损耗\n• 高功率密度和效率，适用于卓越的电源转换系统\n• 一流的性价比;

Infineon

英飞凌

CoolMOSTM Power Transistor

Features • Worldwide best R DS ,on in TO220 • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: • Hard &am

文件：282.07 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.14Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.58 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOSTM Power Transistor

文件：361.97 Kbytes 页数：10 Pages

Infineon

英飞凌