isc N-Channel MOSFET Transistor

文件：315.31 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：320N20N；Package：PG-TO262-3；OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

文件：736.8 Kbytes 页数：11 Pages

INFINEON

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OptiMOSTM3 Power-Transistor Features N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id

文件：426.99 Kbytes 页数：11 Pages

INFINEON

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OptiMOS3 Power Transistor

Features • N-channel, normal level * Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Ros(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21 • Ideal f

文件：736.8 Kbytes 页数：11 Pages

INFINEON

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OptiMOSTM3 Power-Transistor

文件：425.21 Kbytes 页数：11 Pages

INFINEON

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N 沟道功率 MOSFET

Infineon's 200V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. • Industry’s lowest R DS(on)\n• Lowest Q g and Q gd\n• World’s lowest FOM RoHS compliant − halogen free MSL 1 rated\n\n优势:\n• Highest efficiency\n• Highest power density\n• Lowest board space consumption\n• Minimal device paralleling required\n• System cost improvement\n• Enviromentally friendly\n• ;

Infineon

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