isc N-Channel MOSFET Transistor

文件：305.33 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：037N08N；Package：PG-TO262-3；OptiMOS3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

文件：1.026859 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：037N08N；Package：PG-TO262-3；OptiMOS™3 Power-Transistor

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified acc

文件：503.84 Kbytes 页数：11 Pages

INFINEON

英飞凌

N 沟道功率 MOSFET

OptiMOS ™是高效发电解决方案的市场领导者（例如太阳能微型逆变器）、电源（例如服务器和电信）和功耗（例如电动汽车 • 针对 DC-DC 转换器的优化技术\n• 出色的栅极电荷 x R DS(ON) 乘积 (FOM)\n• 卓越的热阻\n• 双面冷却\n• 低寄生电感\n• 薄型 (<0.7mm)\n• N 沟道，正常电平\n• 100% 雪崩测试\n• 无铅电镀；符合 RoHS 标准;

Infineon

英飞凌