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首页>IPD80R1K0CE>芯片详情
IPD80R1K0CE_INFINEON/英飞凌_Metal Oxide Semiconductor Field Effect Transistor华康联电子
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产品属性
- 类型
描述
- 制造商编号
:IPD80R1K0CE
- 生产厂家
:英飞凌
- OPN
:IPD80R1K0CEATMA1
- Qualification
:Non-Automotive
- Package name
:PG-TO252-3
- VDS max
:800 V
- RDS (on) @10V max
:950 mΩ
- ID @25°C max
:5.7 A
- QG typ @10V
:31 nC
- Special Features
:price/performance
- Polarity
:N
- Operating Temperature min
:-55 °C
- VGS(th) min
:2.1 V
- VGS(th) max
:3.9 V
- Technology
:CoolMOS™ CE
供应商
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