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首页>IPD80R1K4C>芯片详情
IPD80R1K4C_NOVOSENSE/纳芯微电子_Metal Oxide Semiconductor Field Effect Transistor安富世纪二部
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产品属性
- 类型
描述
- 制造商编号
:IPD80R1K4C
- 生产厂家
:英飞凌
- OPN
:IPD80R1K4CEATMA1
- Qualification
:Non-Automotive
- Package name
:PG-TO252-3
- VDS max
:800 V
- RDS (on) @10V max
:1400 mΩ
- ID @25°C max
:3.9 A
- QG typ @10V
:23 nC
- Special Features
:price/performance
- Polarity
:N
- Operating Temperature min
:-55 °C
- VGS(th) min
:2.1 V
- VGS(th) max
:3.9 V
- Technology
:CoolMOS™ CE
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