650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Increased efficiency due to best in class FOM RDS(on) *Eoss and RDS(o

文件：1.68375 Mbytes 页数：15 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.225Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.34 Kbytes 页数：2 Pages

ISC

无锡固电

500V-900V CoolMOS™ N-Channel Power MOSFET

英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步，在全球范围内实现了低 RDS(on)/封装，并且得益于其低开关损耗，可在全负载范围内提高效率。 • 650V 电压\n• 具有突破性且出色的R DS(on)/封装\n• 减少储存在输出电容中的能量 (Eoss)\n• 低栅极电荷Qg\n• 通过使用更小的封装或减少零部件节省空间\n• 在超结技术领域拥有 12 年的制造经验\n\n优势:\n• 提高安全裕度，适用于 SMPS 和太阳能逆变器应用\n• 低通态损耗/小封装\n• 低开关损耗\n• 提高轻载效率\n• 增加功率密度\n• 出色的CoolMOS™质量;

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.225Ω • Enhancement mode • Fast Switching Speed

文件：338.8 Kbytes 页数：2 Pages

ISC

无锡固电

650V CoolMOS??C7 Power Transistor

650V CoolMOS™ C7 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Applications PFC stages and hard switching PWM stages for e.g. Computing, Serve

文件：1.70039 Mbytes 页数：15 Pages

Infineon

英飞凌