N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤64mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.33 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

文件：352.81 Kbytes 页数：9 Pages

Infineon

英飞凌

N-Channel 6 0-V (D-S) MOSFET

文件：988.74 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

OptiMOS짰 Power-Transistor Features For fast switching converters and sync. rectification

文件：509.41 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS짰 Power-Transistor Features For fast switching converters and sync. rectification

文件：509.41 Kbytes 页数：9 Pages

Infineon

英飞凌

N 沟道功率 MOSFET

OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and f • Excellent gate charge x R DS(on) product (FOM)\n• Very low on-resistance R DS(on)\n• Ideal for fast switching applications\n• RoHS compliant - halogen free\n• MSL1 rated\n\n优势:\n• Highest system efficiency\n• Less paralleling required\n• Increased power density\n• System cost reduction\n• Very low;

Infineon

英飞凌