丝印：60R280F7；Package：PG-TO252-3；600V CoolMOS짧 CFD7 Power Transistor

文件：1.204 Mbytes 页数：14 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

文件：335.92 Kbytes 页数：2 Pages

ISC

无锡固电

英飞凌对谐振高功率拓扑的回答

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compare • Ultra-fast body diode\n• Best-in-class reverse recovery charge (Qrr)\n• Improved reverse diode dv/dt and dif/dt ruggedness\n• Lowest FOM RDS(on) x Qg and Eoss\n• Best-in-class RDS(on)/package combinations\n\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topol;

Infineon

英飞凌

N-Channel MOSFET Transistor

文件：339.67 Kbytes 页数：2 Pages

ISC

无锡固电

600V CoolMOS짧 CFD7 Power Transistor

文件：1.71412 Mbytes 页数：14 Pages

Infineon

英飞凌