首页 >IPD60R180C7>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPD60R180C7 | N-Channel MOSFET Transistor •DESCRITION •Suitableforhardandsoftswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.18Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPD60R180C7 | Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •Suitableforhardandsoftswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.18Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •CombinestheexperienceoftheleadingSJMOSFETsupplier withhighclassinnovation •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.18Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevic | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
600VCoolMOS짧C7PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •CombinestheexperienceoftheleadingSJMOSFETsupplier withhighclassinnovation •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.18Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevic | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
20+ |
TO252 |
16300 |
终端可免费提供样品,欢迎咨询 |
询价 | ||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
询价 | ||
INFINEON |
21+ |
TO252 |
1516 |
十年信誉,只做原装,有挂就有现货! |
询价 | ||
INENOI |
21+ |
SOT252 |
32500 |
全新原装,价格优势 |
询价 | ||
INFINEON |
21+ |
TO252 |
60000 |
原装正品进口现货 |
询价 | ||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon/英飞凌 |
22+ |
PG-TO252-3 |
33513 |
只做原装现货工厂免费出样欢迎咨询订单 |
询价 | ||
INFINEON |
22+ |
sot |
7500 |
原厂批价一手货源,市场优惠价格 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-252 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
23+ |
N/A |
85900 |
正品授权货源可靠 |
询价 |
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