IPD50N10S3L-16

OptiMOS-T Power-Transistor

IPD50N10S3L-16

Material Content Data Sheet

IPD50N10S3L-16

20V-650V汽车级MOSFET; • N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green product (RoHS compliant)\n • 100% Avalanche tested\n\n优势:\n• highest current capability 180A\n • low switching and conduction power losses for high thermal efficiency\n • robust packages with superior quality and reliability\n • optimized total gate charge enables smaller driver output stages\n;

IPD50N10S3L-16_15

Material Content Data Sheet

IPI50N10S3L-16

OptiMOS-TPower-Transistor

IPP50N10S3L-16

OptiMOS-TPower-Transistor