IPD30N06S2L-13

N-Channel MOSFET

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

IPD30N06S2L-13

OptiMOS Power-Transistor

IPD30N06S2L-13

20V-650V汽车级MOSFET; • N-channel Logic Level - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green package (lead free)\n • Ultra low Rds(on)\n • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest current capability\n • lowest switching and conduction power losses for highest thermal efficiency\n • robust packages with superior quality and reliability\n • Optimized total gate charge enables smaller driver output stages\n;

IPD30N06S2L-23

OptiMOS Power-Transistor

IPD30N06S2L-23

20V-650V汽车级MOSFET; • • N-channel - Enhancement mode\n • • Automotive AEC Q101 qualified\n • • MSL1 up to 260°C peak reflow\n • • 175°C operating temperature\n • • Green package (lead free)\n • • Ultra low Rds(on)\n • • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest current capability\n • lowest switching and conduction power losses for highest thermal efficiency\n • robust packages with superior quality and reliability\n • Optimized total gate charge enables smaller driver output stages\n;