IPD170N04NG说明书PDF资料行情报价英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IPD170N04NG	文件：196.91 Kbytes Page：9 Pages	OptiMOS3 Power-Transistor 文件：196.91 Kbytes 页数：9 Pages	INFINEON 英飞凌	INFINEON
IPD170N04NG	文件：300 bytes Page：1 Pages	OptiMOS3 Power-Transistor	Infineon 英飞凌	Infineon
ADM170N04	文件：807.9 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM170N04 series MOSFETs is a new technology, which combines an innovative super junct 文件：807.9 Kbytes 页数：6 Pages	ADV 爱德微	ADV
ADM170N04G	文件：807.83 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM170N04G series MOSFETs is a new technology, which combines an innovative super junc 文件：807.83 Kbytes 页数：6 Pages	ADV 爱德微	ADV

更多IPD170N04NG供应商更新时间2026-1-19 14:03:00