IPB80N08S2L-07

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·FastSwitchingSpeed APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·Highcurrentswitchingapplications ·DC-DCconverterandmotordriveapplications

IPB80N08S2L-07

20V-650V汽车级MOSFET; • N-channel Logic Level - Enhancement mode\n• Automotive AEC Q101 qualified\n• MSL1 up to 260°C peak reflow\n• 175°C operating temperature\n• Green package (lead free)\n• Ultra low Rds(on)\n• 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 75V (on)  in planar technology\n• highest current capability\n• lowest switching and conduction power losses for highest thermal efficiency\n• robust packages with superior quality and reliability\n• Optimized total gate charge enables smaller driver output stages\n;

IPB80N08S2L-07

OptiMOS짰 Power-Transistor

IPB80N08S2L-07

OptiMOS??Power-Transistor

IPB80N08S2L-07

isc N-Channel MOSFET Transistor

IPP80N08S2L-07

iscN-ChannelMOSFETTransistor

IPP80N08S2L-07

OptiMOS??Power-Transistor

IPP80N08S2L-07

OptiMOS짰Power-Transistor

IPP80N08S2L-07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IPP80N08S2L-07

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.