IPB80N06S2-H5

OptiMOS Power-Transistor

IPB80N06S2-H5

20V-650V汽车级MOSFET; • N-channel - Enhancement mode\n • •Automotive AEC Q101 qualified\n • •MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green package (lead free)\n • Ultra low Rds(on)\n • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest current capability\n • lowest switching and conduction power losses for highest thermal efficiency\n • robust packages with superior quality and reliability\n • Optimized total gate charge enables smaller driver output stages\n;

IPP80N06S2-H5

OptiMOSPower-Transistor

SPB80N06S2-H5

OptiMOSPower-Transistor

SPP80N06S2-H5

N-Channel60V(D-S)MOSFET

SPP80N06S2-H5

OptiMOSPower-Transistor