丝印：65F6150；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™M CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. Th

文件：3.82385 Mbytes 页数：20 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：316.91 Kbytes 页数：2 Pages

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

文件：2.19525 Mbytes 页数：16 Pages

Infineon

英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7\n 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation • 650V technology with integrated fast body diode\n• Limited voltage overshoot during hard commutation\n• Significant Qg reduction compared to 600V CFD technology\n• Tighter RDS(on) max to RDS(on) typ window\n• Easy to design-in\n• Lower price compared to 600V CFD technology\n\n优势:\n• Low switching ;

Infineon

英飞凌