丝印：65A145F7；Package：PG-TO263-3；650V CoolMOS짧 CFD7A SJ Power Device

文件：1.40553 Mbytes 页数：14 Pages

Infineon

英飞凌

650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100 avalanche tested • Kelvin source contact available • Best-in-class RDS(on) in SMD and THD packages

文件：1.4141 Mbytes 页数：14 Pages

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英飞凌

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 17A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 145mΩ(Max)@VGS= 10V APPLICATIONS · Unidirectional · Bidirectional DC-DC converters · On-Board battery Chargers

文件：398.79 Kbytes 页数：2 Pages

ISC

无锡固电

650V CoolMOS짧 CFD7A SJ Power Device

文件：1.73748 Mbytes 页数：14 Pages

Infineon

英飞凌