650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg

文件：1.57265 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.15 Kbytes 页数：2 Pages

ISC

无锡固电

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步，在全球范围内实现了低 RDS(on)/封装，并且得益于其低开关损耗，可在全负载范围内提高效率。 • 650V 电压\n• 具有突破性且出色的R DS(on)/封装\n• 减少储存在输出电容中的能量 (Eoss)\n• 低栅极电荷Qg\n• 通过使用更小的封装或减少零部件节省空间\n• 在超结技术领域拥有 12 年的制造经验\n\n优势:\n• 提高安全裕度，适用于 SMPS 和太阳能逆变器应用\n• 低通态损耗/小封装\n• 低开关损耗\n• 提高轻载效率\n• 增加功率密度\n• 出色的CoolMOS™质量;

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.045Ω • Enhancement mode • Fast Switching Speed

文件：338.96 Kbytes 页数：2 Pages

ISC

无锡固电

650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Increased efficiency due to best in class FOM RDS(on) *Eoss and RDS(o

文件：1.67087 Mbytes 页数：15 Pages

Infineon

英飞凌

650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Better efficiency due to best inclass FOM RDS(on)*Eoss and RDS(on)*Qg

文件：2.01172 Mbytes 页数：15 Pages

Infineon

英飞凌