首页 >IPB60R600C6>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPB60R600C6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPB60R600C6 | Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPB60R600C6 | Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdev | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdev | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor MOSFET MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS™C6PowerTransistor Applications PFCstates,hardswitchingPWMstagesandresonantswitchingPWMstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom,UPS. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |
详细参数
- 型号：
IPB60R600C6
- 功能描述：
MOSFET 600V CoolMOS C6 Power Transistor
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2021+ |
SOT-263 |
16871 |
原装进口假一罚十 |
询价 | ||
INFINEON |
23+ |
D2PAK(TO-263) |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
英飞翎 |
17+ |
D2PAK(TO-263) |
31518 |
原装正品 可含税交易 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
D2PAK(TO-263) |
28523 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
INFINEON |
2022+ |
D2PAK(TO-263) |
5000 |
只做原装公司现货 |
询价 | ||
Infineon |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
INFINE0N |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
90450 |
正品授权货源可靠 |
询价 | |||
Infineon/英飞凌 |
1937+ |
TO-263 |
9852 |
只做进口原装正品现货!或订货假一赔十! |
询价 | ||
VB |
2019 |
TO263 |
55000 |
绝对原装正品假一罚十! |
询价 |
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