丝印：60R360P7；Package：PG-TO263-3；600V CoolMOS짧 P7 Power Transistor

文件：1.13439 Mbytes 页数：14 Pages

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丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：189.19 Kbytes 页数：2 Pages

ISC

无锡固电

优化的超结 MOSFET，兼具高能效和易用性

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensur Efficiency\n • 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG\nEase-of-use\n • Integrated ESD diode from 180mN and above RDS(on)s\n• Integrated gate resistor RG\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial grade pa;

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N-Channel MOSFET Transistor

文件：335.56 Kbytes 页数：2 Pages

ISC

无锡固电

600V CoolMOS짧 P7 Power Transistor

文件：912 Kbytes 页数：14 Pages

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600V CoolMOS짧 P7 Power Transistor

文件：1.10642 Mbytes 页数：14 Pages

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