丝印：60R210F7；Package：PG-TO263-3；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.23122 Mbytes 页数：14 Pages

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600V CoolMOS ™ CFD7 SJ MOSFET 集成快速体二极管，采用 D2PAK 封装，是谐振高功率拓扑的完美选择

• Ultra-fast body diode\n• Best-in-class reverse recoverycharge (Qrr)\n• Improved reverse diode dv/dt anddif/dt ruggedness\n• Lowest FOM RDS(on)x Qgand EOSS\n• Best-in-class RDS(on)/packagecombinations\n\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topologies;

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英飞凌

600V CoolMOS짧 CFD7 Power Device

文件：1.00257 Mbytes 页数：14 Pages

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英飞凌

600V CoolMOS짧 CFD7 Power Transistor

文件：1.67172 Mbytes 页数：14 Pages

Infineon

英飞凌