CoolMOSTM Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

文件：341.09 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：188.93 Kbytes 页数：2 Pages

ISC

无锡固电

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS ™ CP 是英飞凌 CoolMOS ™的第五个系列，专为硬开关和软开关拓扑、CCM PFC 以及 ATX、笔记本适配器 PDP 和 LCD 电视的 PWM 而设计。 • 最低品质因数 R on x Q g\n• 极高的 dv/dt 速率\n• V th 3 V，g fs 非常高，内部 R g 非常低\n• 显著降低传导和开关损耗\n• 一流的性价比;

Infineon

英飞凌

CoolMOSTM Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

文件：274.55 Kbytes 页数：10 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.125Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：330.81 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

文件：335.88 Kbytes 页数：10 Pages

Infineon

英飞凌