isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=17A@ TC=25℃ · Drain Source Voltage -VDSS=250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

OptiMOS??T Power-Transistor

文件：203.25 Kbytes 页数：9 Pages

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英飞凌

N-channel - Enhancement mode

文件：203.25 Kbytes 页数：9 Pages

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250 V、N 沟道、最大 100 mΩ、汽车 MOSFET、D2PAK、OptiMOS ™ -T

• N-channel - Enhancement mode\n • AEC qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green Product (RoHS compliant)\n • 100% Avalanche tested\n\n优势:\n• low RDS (on) in trench technology- down to 19.3 mOhm\n • highest current capability 64A\n • low switching and c;

Infineon

英飞凌

N-channel - Enhancement mode

文件：203.25 Kbytes 页数：9 Pages

Infineon

英飞凌