Metal Oxide Semiconductor Field Effect Transistor

文件：1.14456 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：188.91 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道功率 MOSFET

OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. • Improved hard commutation ruggedness \n• Optimized hard switching behavior \n• Industry’s lowest R ds(on), Q g and Q rr \n• RoHS compliant - halogen free\n\n优势:\n• Highest system reliability\n• System cost reduction\n• Highest efficiency and power density\n• Easy-to-design products;

Infineon

英飞凌

TO263

Infineon

英飞凌

上传：瀚佳科技(深圳)有限公司

TO-263-7

INFINEON/英飞凌

上传：深圳市大联智电子有限公司