isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：400.23 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS-T Power-Transistor

文件：192.34 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS-T Power-Transistor

文件：192.34 Kbytes 页数：9 Pages

Infineon

英飞凌

100 V、N沟道、最大4.8 mΩ、汽车MOSFET、D2PAK、OptiMOS ™ -T

• N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green product (RoHS compliant)\n • 100% Avalanche tested\n\n优势:\n• highest current capability 180A\n • low switching and conduction power losses for high thermal ;

Infineon

英飞凌