OptiMOS?? Power-Transistor

Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target ap

文件：243.06 Kbytes 页数：9 Pages

INFINEON

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OptiMOS?? Power-Transistor

Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target ap

文件：243.06 Kbytes 页数：9 Pages

INFINEON

英飞凌

OptiMOS?? Power-Transistor

Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target ap

文件：243.06 Kbytes 页数：9 Pages

INFINEON

英飞凌

N 沟道功率 MOSFET

The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilites for optimized solutions. • Excellent switching performance\n• World’s lowest R DS(on)\n• Very low Q g and Q gd\n• Excellent gate charge x R DS(on) product (FOM)\n• RoHS compliant-halogen free\n• MSL1 rated 2\n\n优势:\n• Environmentally friendly\n• Increased efficiency\n• Highest power density\n• Less paralleling required\n• S;

Infineon

英飞凌