丝印：017N10N5；Package：PG-TO263-7；N-channel, normal level

Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21

文件：1.27126 Mbytes 页数：12 Pages

Infineon

英飞凌

N 沟道功率 MOSFET

OptiMOS™ 5 100V 功率 MOSFETs 专为通信和服务器电源中的同步整流而设计。此外，这些器件还可以在其他工业应用中使用，例如太阳能、低压驱动器和适配器。新型 OptiMOS™ 5 100V MOSFET 采用七种不同封装，提供了行业内较低 R DS(on)。 • 针对同步整流进行优化\n• 非常适合高开关频率\n• 输出电容降低高达 44%\n• 与前一代相比降低高达 43%\n\n优势:\n• 高系统效率\n• 降低开关和通态损耗\n• 减少并联\n• 增加功率密度\n• 低电压过冲;

Infineon

英飞凌

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 27A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

文件：335.58 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：017N10LF；Package：PG-TO263-7；OptiMOSTM 5 Linear FET, 100 V

文件：1.10321 Mbytes 页数：11 Pages

Infineon

英飞凌

Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating a • Combination of low R DS(on) and wide safe operating area (SOA)\n• High max. pulse current\n• High continuous pulse current�\n\n优势:\n• Rugged linear mode operation\n• Low conduction losses�\n• Higher in-rush current enabled for faster start-up and shorter down time;

Infineon

英飞凌