5 Port 10/100 Ethernet Integrated Switch (Loop Detection, Layer 2-4 MF Classifier, HW IGMP Snooping)

Features *Wide operating temperature range -IP175DLF (0°C to 70°C) -IP175DLFI (-40°C to 85°C) *Built in 6 MAC and 5 PHY *Each port can be configured to be 10Based-T, 100Base-TX *Up to 2K MAC addresses *Support auto-polarity for 10Mbps *Broadcast storm protection *Auto MDI-MDIX *Support t

文件：1.28548 Mbytes 页数：145 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

5 Port 10/100 Ethernet Integrated Switch (Loop Detection, Layer 2-4 MF Classifier, HW IGMP Snooping)

Features *Wide operating temperature range -IP175DLF (0°C to 70°C) -IP175DLFI (-40°C to 85°C) *Built in 6 MAC and 5 PHY *Each port can be configured to be 10Based-T, 100Base-TX *Up to 2K MAC addresses *Support auto-polarity for 10Mbps *Broadcast storm protection *Auto MDI-MDIX *Support t

文件：1.28548 Mbytes 页数：145 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

5-port 10/100M Layer 2 + Ethernet Integrated Switch

IP175D integrates a 6-port switch controller, SSRAM, and 5 10/100 Ethernet transceivers. Each of the transceivers compliers with the IEEE802.3, IEEE802.3u, and IEEE802.3x specifications. The DSP approach is utilized for designing transceivers with 0.16um technology; they have high noise immunity and Built in 6 MAC and 5 PHY\r\nEach port can be configured to be 10Base-T, 100Base-TX\r\nUp to 2K MAC address\r\nSupport auto-polarity for 10Mbps\r\nBroadcast storm protection\r\nAuto MDI-MDIX\r\nSupport three MII/RMII ports\r\nLayer2-4 Multi-Field classifier\r\n- Support 8-MultiField entry \r\n- Suppo;

IC+

九旸电子

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

文件：183.2 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

文件：183.2 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

文件：138.89 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉