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IMZA65R007M2H中文资料CoolSiC ™ MOSFET 650 V G2，采用 TO-247-4 封装数据手册Infineon规格书
IMZA65R007M2H规格书详情
描述 Description
CoolSiC™ MOSFET 650 V G2 in TO-247-4 package
特性 Features
• Excellent figures of merit (FOMs)
• Single-digit RDS(on) in TO-247-4 pin
• Best in class RDS(on)
• High robustness and overall quality
• Support for unipolar driving (Vgsoff=0)
• Best immunity against turn-on effects
• Improved package interconnect with .XT
• 4-pin package
优势:
• Enables BOM savings
• Maximizes the system performance per $
• Highest reliability
• Enables top efficiency and power density
• Ease-of-use
• Full compatibility with existing vendors
• Allows designs without fan or heatsink
• Kelvin source connection
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
PG-TO247-4-3 |
6820 |
只做原装,质量保证 |
询价 | ||
INFINEON/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
询价 | ||
24+ |
32000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||||
Infineon/英飞凌 |
23+ |
PG-TO247-4-3 |
10000 |
原装正品，支持实单 |
询价 | ||
Infineon(英飞凌) |
2447 |
PG-TO247-4-3 |
115000 |
240个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
INFINEON |
23+ |
GOOP |
7000 |
询价 | |||
Infineon(英飞凌) |
25+ |
TO-247-4 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-247-3 |
400 |
原装正品 |
询价 | ||
Infineon/英飞凌 |
2022+ |
PG-TO247-4-3 |
48000 |
只做原装,绝对原装,假一罚十 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TO247-4-3 |
6000 |
我们只做原装正品,支持检测。 |
询价 |
