IMZA65R007M2H

丝印：65R007M2；Package：PG-TO247-4；CoolSiCª MOSFET 650 V G2

Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

IMZA65R007M2H

Silicon Carbide MOSFET Discretes

CoolSiC™ MOSFET 650 V G2 in TO-247-4 package\n; • Excellent figures of merit (FOMs)\n• Single-digit RDS(on) in TO-247-4 pin\n• Best in class RDS(on)\n• High robustness and overall quality\n• Support for unipolar driving (Vgsoff=0)\n• Best immunity against turn-on effects\n• Improved package interconnect with .XT\n• 4-pin package\n\n优势:\n• Enables;

IMBG65R007M2H

MOSFETCoolSiCªMOSFET650VG2

Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

IMDQ65R007M2H

CoolSiC™MOSFET650VG2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

IMW65R007M2H

CoolSiCªMOSFET650VG2

Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •