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J429

2xNGigabitPoE

pulse

Pulse A Technitrol Company

K429L

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

LN429YP

5.0mmX1.5mmSeries

PanasonicPanasonic Semiconductor

松下松下电器

LN429YPH

5.0mmX1.5mmSeries

PanasonicPanasonic Semiconductor

松下松下电器

MRF429

RFPOWERTRANSISTORNPNSILICON

TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=13dB

MACOMTyco Electronics

玛科姆技术方案控股有限公司

MRF429

TheRFLineNPNSiliconPowerTransistor150W(PEP),30MHz,28V

Designedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50V,30MHzCharacteristics— Outputpower=150W(PEP) Minimumgain=13dB Efficiency=45 •Intermodulationdistortion@

MA-COM

M/A-COM Technology Solutions, Inc.

MRF429

RFPOWERTRANSISTORNPNSILICON

TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=13dB

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MRF429

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASIMRF429isDesignedforHighvoltageapplicationsuptp30MHz FEATURES: •PG=13dBmin.at150W/30MHz •IMD3=-32dBcmax.at150W(PEP) •Omnigold™MetalizationSystem

ASI

Advanced Semiconductor

MRF429

TheRFLineNPNSiliconPowerTransistor150W(PEP),30MHz,50V

MA-COM

M/A-COM Technology Solutions, Inc.

MRF429

NPNSiliconRFpowertransistor

Description: MRF429isdesignedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. Features: Specified50Volt,30MHzCharacteristics: OutputPower=150W(PEP),MinimumGain=13dB,Efficiency=45

ELEFLOW

eleflow technologies co., ltd.

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