CMOS Image Sensors with 3.45 μm and 6.9 μm Pixels and Global Shutter Function for Industrial and Sensing Applications ustrial

■ Global shutter function ■ High frame rate ■ A variety of functions (external trigger mode, multiple exposure function, ROI mode, multiple image sensor synchronization function, etc.) ■ Compact device size (14 mm × 14 mm) ■ Expanded lineup (3.45 μm pixel and 6.9 μm pixel, Sub LVDS, MIPI inte

文件：669.05 Kbytes 页数：2 Pages

SonySony Corporation

索尼

全局快门方式图像传感器

Sony

索尼

CMOS Image Sensor

Sony

索尼

INA296x ??-V to 110-V, Bidirectional, 1-MHz, 5-V/關s, Ultra-Precise Current Sense Amplifier

文件：1.42541 Mbytes 页数：27 Pages

TI

德州仪器

INA296x ??-V to 110-V, Bidirectional, 1-MHz, 5-V/關s, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −4 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1 MHz (at all gains) • Slew rate: 5 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 160 dB • Accuracy:

文件：1.42613 Mbytes 页数：27 Pages

TI

德州仪器

INA296x –5 V to 110 V, Bidirectional, 1.1 MHz, 8 V/μs, Ultra-Precise Current Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: −5 V to +110 V – Survival voltage: −20 V to +120 V • Bidirectional operation • High small signal bandwidth: 1.1 MHz (at all gains) • Slew rate: 8 V/μs • Step response settling time to 1: 1 μs • Excellent CMRR: 166 dB • Accuracy

文件：2.41169 Mbytes 页数：33 Pages

TI

德州仪器