丝印：65R022M1；Package：PG-HSOF-8；MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

Features • Optimized switching behavior at higher currents • Commutation robust fast body diode with low Qf • Superior gate oxide reliability • Tj,max=175°C and excellent thermal behavior • Lower RDS(on) and pulse current dependency on temperature • Increased avalanche capability • Compatib

文件：1.52403 Mbytes 页数：15 Pages

Infineon

英飞凌

SiC N-Channel MOSFET

FEATURES ·Drain Current -ID= 79A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 42mΩ(Max)@VGS= 20V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

文件：420.31 Kbytes 页数：4 Pages

ISC

无锡固电

采用 TOLL 封装的 CoolSiC ™ MOSFET 分立器件 650 V

\n优势:\n• Enable high system power density and high switching operations\n• Enable cheaper and faster SMD assembly\n• Ease of use and compatibility with existing vendors\n• Reduced switching losses\n• Lower case temperature and higher reliability\n• Enables easy design-in with complementing Infineon ;

Infineon

英飞凌

Package：8-PowerSFN；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：SILICON CARBIDE MOSFET

Infineon

英飞凌