Features

• Single-channel isolated gate driver

• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs

• Up to 6.5 A typical peak output current

• 45 ns propagation delay with 7 ns part-to-part matching (skew)

• 35 V absolute maximum output supply voltage

• High common-mode transient immunity CMTI > 300 kV/μs

• Separate source and sink outputs with active shutdown and short circuit clamping

• Galvanically isolated coreless transformer gate driver

• 3.3 V and 5 V input supply voltage

• Suitable for operation at high ambient temperature and in fast switching applications

• UL 1577 certification VISO = 3.0 kV (rms) for 1 min

IKWH40N65WR6属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。英飞凌科技公司制造生产的IKWH40N65WR6晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。