High speed switching series fifth generation

Infineon

英飞凌

High speed switching series fifth generation

文件：1.98924 Mbytes 页数：16 Pages

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 74A 255W PG-TO247-3

Infineon

英飞凌

High speed IGBT in TRENCHSTOPTM 5 technology

Features and Benefits: High speed H5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • Plug and play replacement of previous generation IGBTs • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress te

文件：1.46575 Mbytes 页数：14 Pages

Infineon

英飞凌

High speed fast IGBT in TRENCHSTOPTM 5 technology

文件：1.79311 Mbytes 页数：14 Pages

Infineon

英飞凌

BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)

Features n 650 V, 40 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Novel trench-gate field-stop technology n Optimized for conduction n High-speed switching n Maximum operating Tj = 175 °C n RoHS compliant* Applications n Switched-Mode Power Supplies (SMPS) n Uninterruptible

文件：1.25339 Mbytes 页数：11 Pages

Bourns

伯恩斯