BIDW40N65H5 Insulated Gate Bipolar Transistor (IGBT)

Features n 650 V, 40 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) n Novel trench-gate field-stop technology n Optimized for conduction n High-speed switching n Maximum operating Tj = 175 °C n RoHS compliant* Applications n Switched-Mode Power Supplies (SMPS) n Uninterruptible

文件：1.25339 Mbytes 页数：11 Pages

Bourns

伯恩斯

650V IGBT high speed switching series fifth generation

文件：2.30811 Mbytes 页数：15 Pages

Infineon

英飞凌

High speed 5 IGBT in TRENCHSTOP 5 technology

文件：2.48832 Mbytes 页数：15 Pages

Infineon

英飞凌

High speed 5 IGBT in TRENCHSTOP 5 technology

文件：2.48832 Mbytes 页数：15 Pages

Infineon

英飞凌