IGBT copacked with RAPID 1 fast and soft antiparallel diode

Infineon

英飞凌

IGBT copacked with RAPID 1 fast and soft antiparallel diode

文件：1.98575 Mbytes 页数：16 Pages

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 74A 255W PG-TO247-3

Infineon

英飞凌

High speed FAST IGBT in TRENCHSTOPTM 5 technology

Features and Benefits: High speed F5 technology offering: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Green package (

文件：1.45739 Mbytes 页数：14 Pages

Infineon

英飞凌

High speed FAST IGBT in TRENCHSTOPTM 5 F5 technology

Features and Benefits: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Pb-free lead plating; RoHS compliant • Innovative

文件：1.71006 Mbytes 页数：14 Pages

Infineon

英飞凌

High speed fast IGBT in TRENCHSTOPTM 5 technology

文件：1.80213 Mbytes 页数：14 Pages

Infineon

英飞凌