600V low loss switching series third generation

Infineon

英飞凌

600V low loss switching series third generation

文件：2.28139 Mbytes 页数：16 Pages

INFINEON

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V TO247-3

INFINEON

英飞凌

10V Drive Nch MOS FET

文件：61.73 Kbytes 页数：3 Pages

ROHM

罗姆

N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

文件：158.88 Kbytes 页数：6 Pages

RECTRON

丽正国际

N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DFV uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

文件：224.17 Kbytes 页数：6 Pages

RECTRON

丽正国际