丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.94 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤24.5mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.34 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：168.77 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Description The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enla

文件：827.7 Kbytes 页数：9 Pages

KERSEMI

60V N-Channel IRFL4105

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particula

文件：577.74 Kbytes 页数：6 Pages

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