丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.81 Kbytes 页数：2 Pages

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N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

文件：338.06 Kbytes 页数：2 Pages

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650V CoolMOS E6 Power Transistor

Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resultin

文件：1.87356 Mbytes 页数：17 Pages

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Metall Oxide Semiconductor Field Effect Transistor

文件：1.17442 Mbytes 页数：18 Pages

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