首页 >IIPA60R280E6>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IIPA60R280E6

N-Channel MOSFET Transistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP60R280E6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPW60R280E6

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R280E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPA60R280E6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R280E6

600VCoolMOSE6PowerTransistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP60R280E6

600VCoolMOSE6PowerTransistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP60R280E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP60R280E6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW60R280E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格
INFINEON
23+
SMD
8000
只做原装现货
询价
INFINEON
23+
SMD
7000
询价
INFINEON/英飞凌
24+
SMD
60000
全新原装现货
询价
INFINEON/英飞凌
23+
SMD
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
N/A
2023+
SOP8
50000
全新原装现货
询价
IR
22+
DIP
6000
终端可免费供样,支持BOM配单
询价
IOR
23+24
SIP
9860
原厂原包装。终端BOM表可配单。可开13%增值税
询价
INFINEON
24+
con
10000
查现货到京北通宇商城
询价
VISHAY
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
询价
VISHAY/威世
24+
TO-252
30000
只做正品原装现货
询价
更多IIPA60R280E6供应商 更新时间2025-7-24 15:01:00