丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.1 Kbytes 页数：2 Pages

ISC

无锡固电

600V CoolMOS E6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

文件：1.34492 Mbytes 页数：17 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.22433 Mbytes 页数：17 Pages

Infineon

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Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicatio

文件：269.86 Kbytes 页数：2 Pages

ISC

无锡固电