IIPD60R1K4C6中文资料下载供应商报价ISC-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IIPD60R1K4C6	文件：336 Kbytes Page：2 Pages	丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：336 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IIPP60R1K4C6	文件：338.81 Kbytes Page：2 Pages	N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device p 文件：338.81 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IPD60R1K4C6	文件：33.25 Kbytes Page：1 Pages	Material Content Data Sheet 文件：33.25 Kbytes 页数：1 Pages	Infineon 英飞凌	Infineon
IPD60R1K4C6	文件：336 Kbytes Page：2 Pages	N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：336 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多IIPD60R1K4C6供应商更新时间2025-10-6 15:06:00