N-Channel MOSFET Transistor

• DESCRIPTION • High peak current capability • Ultra low gate charge • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.2Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：339.52 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.43 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

DESCRITION • High peak current capability FEATURES • Static drain-source on-resistance: RDS(on)≤1.2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.46 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologi

文件：340.93 Kbytes 页数：10 Pages

Infineon

英飞凌