首页 >IIPW90R1K2C3>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IIPW90R1K2C3 | N-Channel MOSFET Transistor DESCRITION •Highpeakcurrentcapability FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-ChannelMOSFETTransistor •DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonantFlyback/Forwardtopologi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS™PowerTransistor Features Lowestfigure-of-meritRONxQg Extremedv/dtrated Highpeakcurrentcapability FullyqualifiedaccordingtoJEDECforIndustrialApplications Pb-freeleadplating;RoHScompliant,availableinHalogenfreemoldcompound Ultralowgatecharge | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonantFlyback/Forwardtopologi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonantFlyback/Forwardtopologi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor DESCRITION •Highpeakcurrentcapability FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.2Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistor CoolMOS™PowerTransistor Features •Lowestfigure-of-meritRONxQg •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge CoolMOS™900Visdesignedfor: •QuasiResonant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
DIP |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
DIP |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
DIP |
7000 |
询价 | |||
IOR |
23+24 |
SIP |
9860 |
原厂原包装。终端BOM表可配单。可开13%增值税 |
询价 | ||
INFINEON |
24+ |
con |
10000 |
查现货到京北通宇商城 |
询价 | ||
VISHAY |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
VISHAY/威世 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IFM |
23+ |
SENSOR |
128 |
全新、原装 |
询价 | ||
ST意法 |
20+ |
LGA12 |
17000 |
加速度计,只做全新原装 |
询价 |
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