首页 >IHW40N60R其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LowLossDuoPack:IGBTinTrenchStop-technologywithanti-paralleldiode Features: •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime–5µs •TrenchStop® andFieldstoptechnologyfor600Vapplications offers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCE(sat | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStop-technologywithanti-paralleldiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
600VDuoPackIGBTanddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
EnhancedBodyDiodedV/dtCapability | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFET-RPowerMOSFET | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
LowVCE(sat)IGBT,HighspeedIGBT Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C) Applications ACmo | IXYS IXYS Corporation | IXYS |
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