丝印：H40T60；Package：PG-TO-247-3；Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

Features: • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat

文件：383.77 Kbytes 页数：12 Pages

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Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

Features: • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat

文件：383.77 Kbytes 页数：12 Pages

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Reverse conducting IGBT

文件：2.06634 Mbytes 页数：15 Pages

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Powerful monolithic body diode with low forward voltage designed for soft commutation only

文件：2.03555 Mbytes 页数：15 Pages

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powerful monolithic body diode with low forward voltage

文件：794.56 Kbytes 页数：12 Pages

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英飞凌

Powerful monolithic body diode with low forward voltage designed for soft commutation only

文件：2.03555 Mbytes 页数：15 Pages

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Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

文件：385.26 Kbytes 页数：12 Pages

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分立式IGBT

IGBT 600V in TRENCHSTOP™ and Fieldstop technology with optimised diode.  • Best-in-class V CEsatand V f for outstanding efficiency\n• Lowest switching losses\n• Stable temperature behavior\n• Soft current turn-off waveforms\n• High breakthrough voltage\n• Resistance to current spikes over the SOA\n\n优势:\n• Lowest power dissipation\n• Better thermal management\n• Lower co;

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Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

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Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 305W TO247-3

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