IGBT

DESCRIPTION · Very tight parameter distribution · LowVCEsat · Low EMI APPLICATIONS · Industrial Power Supplies · Inductivecooking · Softswitchingapplications

文件：342.89 Kbytes 页数：2 Pages

ISC

无锡固电

Reverse conducting IGBT with monolithic body diode

文件：1.72332 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：H40MR5；Package：PG-TO247-3；Reverse Conducting IGBT with monolithic body diode

文件：1.77638 Mbytes 页数：15 Pages

Infineon

英飞凌

分立式IGBT

The 3rd generation of reverse conducting 1200 V, 40 A TRENCHSTOP™ RC-IGBT3 with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal p • Best-in-class conduction properties in VCEsatand Vf\n• Lowest switching losses, highest efficiency\n• Excellent thermal behavior\n• Tj(max)= 175°C\n• Soft current turn-off waveforms for low EMI\n\n优势:\n• Lowest power dissipation\n• Better thermal management\n• Surge current capability for lower EM;

Infineon

英飞凌

1200 V、40 A IGBT 分立器件，带反并联二极管，采用 TO-247 封装

The 5th generation of reverse conducting 1200 V, 40 A TRENCHSTOP™ 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications. The 40 A RC-H5 devices complement the previous generation of rever • Switching losses reduced by 20%\n• Very low conduction losses\n• Reduced turn-on current spike up to 10%\n• Tj(max)= 175°C\n• Soft current turn-off waveforms for low EMI\n\n优势:\n• Increased switching frequency\n• Lowest power dissipation\n• Better thermal management for higher reliability\;

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 80A 429W TO247-3

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：HOME APPLIANCES 14

Infineon

英飞凌