IHW30N90T

Marking：H30T90；Package：TO-247-3；Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode

LowLossDuoPack:IGBTinTrenchStop®andFieldstoptechnologywithanti-paralleldiode Features: •1.1VForwardvoltageofantiparalleldiode •TrenchStop®andFieldstoptechnologyfor900Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestab

IHW30N90T

Marking：H30T90；Package：TO-247-3；Soft Switching Series

IHW30N90T_08

Soft Switching Series

IHW30N90TFKSA1

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 900V 60A 428W TO247-3

GW30N90D

N-channel900V-30A-TO-247VeryfastPowerMESHIGBT

IHW30N90R

HighSpeed2-Technology

•Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

IHW30N90R

ReverseConductingIGBTwithmonolithicbodydiode

IHW30N90R

ReverseConductingIGBTwithmonolithicbodydiode

Features: •1.5VtypicalsaturationvoltageofIGBT •TrenchandFieldstoptechnologyfor900Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCE(sat

STGW30N90D

N-channel900V-30A-TO-247VeryfastPowerMESHIGBT